Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters
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Author / Producer
Date
2013
Publication Type
Journal Article
ETH Bibliography
yes
Citations
Altmetric
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Rights / License
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Publication status
published
External links
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Book title
Journal / series
Volume
34 (5)
Pages / Article No.
602 - 604
Publisher
IEEE
Event
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
AlInP; Current gain; Double-heterojunction bipolar transistors (DHBTs); Emitter size effect; GaAsSb; GaInP; Millimeter-wave transistors
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
Notes
Manuscript received 18 December 2012, Revised 13 February 2013, Accepted 23 February 2013, Date of publication 1 April 2013, Date of current Version 22 April 2013.