3-W output power from a 2-μm InGaSb VECSEL using a hybrid metal-semiconductor Bragg reflector
OPEN ACCESS
Downloads
Loading...
Author / Producer
Date
2023-03-01
Publication Type
Data Collection
ETH Bibliography
yes
Citations
Altmetric
OPEN ACCESS
Downloads
Data
Rights / License
Abstract
We present improved thermal management of an optically-pumped vertical external cavity surface emitting laser (VECSEL) at a center wavelength of around 2 μm. This was achieved with a backside-cooled, InGaSb-based VECSEL using a hybrid metal-semiconductor Bragg reflector. We demonstrate the fabrication of such a hybrid metal-semiconductor mirror by combining a copper mirror with 10.5 AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) pairs. Together with a thin 20 nm SiO2 diffusion barrier we reach >99.9% reflectivity at 2 μm.This allows for a thinner gain chip design compared to the standard DBR requiring 19.5 layer pairs. The structure thickness was reduced from 7.5 μm to 4.7 μm lowering the thermal resistance of the device from (2.79±0.16)KW−1 to (2.12±0.19)KW−1. We demonstrate record high average continuous wave (cw) output powers of 3W for backside-cooled InGaSb-based VECSELs.
Permanent link
Publication status
External links
Editor
Contributors
Book title
Journal / series
Volume
Pages / Article No.
Publisher
ETH Zurich
Event
Edition / version
Methods
Software
Geographic location
Date collected
Date created
Subject
VECSELs; Thermal management; Semiconductor Laser
Organisational unit
03371 - Keller, Ursula (emeritus) / Keller, Ursula (emeritus)
Notes
Funding
787097 - Mid-infrared optical dual-comb generation and spectroscopy with one unstabilized semiconductor laser (EC)
Related publications and datasets
Is supplement to: