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dc.contributor.author
Petti, Luisa
dc.contributor.author
Frutiger, Andreas
dc.contributor.author
Münzenrieder, Niko
dc.contributor.author
Salvatore, Giovanni A.
dc.contributor.author
Büthe, Lars
dc.contributor.author
Vogt, Christian
dc.contributor.author
Cantarella, Giuseppe
dc.contributor.author
Tröster, Gerhard
dc.date.accessioned
2017-06-11T17:25:03Z
dc.date.available
2017-06-11T17:25:03Z
dc.date.issued
2015-05
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2015.2418295
dc.identifier.uri
http://hdl.handle.net/20.500.11850/100874
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Flexible electronics
dc.subject
Thin-film transistor (TFT)
dc.subject
Vertical channel
dc.subject
In-Ga-Zn-O (IGZO)
dc.title
Flexible quasi-vertical In-Ga-Zn-O thin-film transistor with 300-nm channel length
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
36
ethz.journal.issue
5
ethz.journal.abbreviated
IEEE electron device lett.
ethz.pages.start
475
ethz.pages.end
477
ethz.notes
Manuscript received 25 February 2015, Revised 24 March 2015, Accepted 25 March 2015, Date of publication 31 March 2015, Date of current version 22 April 2015.
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-11T17:25:13Z
ethz.source
ECIT
ethz.identifier.importid
imp5936532c7939496651
ethz.ecitpid
pub:158383
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T18:01:25Z
ethz.rosetta.lastUpdated
2018-08-02T16:13:31Z
ethz.rosetta.versionExported
true
ethz.COinS
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