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dc.contributor.author
Pal, Atindra Nath
dc.contributor.author
Müller, Susanne
dc.contributor.author
Ihn, Thomas Markus
dc.contributor.author
Ensslin, Klaus
dc.contributor.author
Tschirky, Thomas
dc.contributor.author
Charpentier, Christophe
dc.contributor.author
Wegscheider, Werner
dc.date.accessioned
2019-09-18T11:54:35Z
dc.date.available
2017-06-11T18:53:22Z
dc.date.available
2019-09-18T11:54:35Z
dc.date.issued
2015-07-02
dc.identifier.issn
2158-3226
dc.identifier.other
10.1063/1.4926385
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/103463
dc.identifier.doi
10.3929/ethz-b-000103463
dc.description.abstract
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/3.0/
dc.title
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 3.0 Unported
ethz.journal.title
AIP Advances
ethz.journal.volume
5
en_US
ethz.journal.issue
7
en_US
ethz.pages.start
077106
en_US
ethz.size
5 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.nebis
006233320
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03833 - Wegscheider, Werner / Wegscheider, Werner
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03833 - Wegscheider, Werner / Wegscheider, Werner
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02505 - Laboratorium für Festkörperphysik / Laboratory for Solid State Physics::03439 - Ensslin, Klaus / Ensslin, Klaus
ethz.date.deposited
2017-06-11T18:53:26Z
ethz.source
ECIT
ethz.identifier.importid
imp593653682dc1c47311
ethz.ecitpid
pub:161709
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-15T02:27:41Z
ethz.rosetta.lastUpdated
2019-09-18T11:54:48Z
ethz.rosetta.versionExported
true
ethz.COinS
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