How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
dc.contributor.author
Messerschmitt, F.
dc.contributor.author
Kubicek, M.
dc.contributor.author
Rupp, J.L.M.
dc.date.accessioned
2017-06-11T19:11:48Z
dc.date.available
2017-06-11T19:11:48Z
dc.date.issued
2015-08
dc.identifier.issn
1616-3028
dc.identifier.issn
1616-301X
dc.identifier.other
10.1002/adfm.201501517
dc.identifier.uri
http://hdl.handle.net/20.500.11850/103940
dc.language.iso
en
dc.publisher
Wiley-VCH
dc.subject
Resistors
dc.subject
Electronic structures
dc.subject
Charge transport
dc.subject
Resistive switching
dc.subject
Memristors
dc.subject
Protonic conductivity
dc.title
How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
dc.type
Journal Article
ethz.journal.title
Advanced Functional Materials
ethz.journal.volume
25
ethz.journal.issue
32
ethz.journal.abbreviated
Adv. Funct. Mater.
ethz.pages.start
5117
ethz.pages.end
5125
ethz.notes
Received 15 April 2015, Revised 16 May 2015, Published online 14 July 2015.
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Weinheim
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03967 - Rupp, Jennifer (SNF-Professur) (ehem.) / Rupp, Jennifer (SNF-Professur) (former)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03967 - Rupp, Jennifer (SNF-Professur) (ehem.) / Rupp, Jennifer (SNF-Professur) (former)
ethz.date.deposited
2017-06-11T19:12:07Z
ethz.source
ECIT
ethz.identifier.importid
imp593653737050b50125
ethz.ecitpid
pub:162486
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-17T10:08:15Z
ethz.rosetta.lastUpdated
2022-03-28T14:04:33Z
ethz.rosetta.exportRequired
true
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true
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