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dc.contributor.author
CMS Collaboration
dc.contributor.author
Adam, W.
dc.contributor.author
Bachmair, Felix
dc.contributor.author
Becker, R.
dc.contributor.author
Bäni, Lukas
dc.contributor.author
Di Calafiori, Diogo R.
dc.contributor.author
Casal, Bruno
dc.contributor.author
Djambazov, Lubomir
dc.contributor.author
Donegà, Mauro
dc.contributor.author
Dünser, Marc
dc.contributor.author
Eller, Philipp
dc.contributor.author
Grab, Christophorus
dc.contributor.author
Hits, Dmitry
dc.contributor.author
Horisberger, Urs
dc.contributor.author
Hoss, Jan
dc.contributor.author
Kasieczka, Gregor
dc.contributor.author
Lustermann, Werner
dc.contributor.author
Mangano, Boris
dc.contributor.author
Marionneau, Matthieu
dc.contributor.author
Martinez Ruiz del Arbol, Pablo
dc.contributor.author
Masciovecchio, Mario
dc.contributor.author
Perrozzi, Luca
dc.contributor.author
Roeser, U.
dc.contributor.author
Rossini, Marco
dc.contributor.author
Starodumov, Andrey
dc.contributor.author
Takahashi, Maiko
dc.contributor.author
Wallny, Rainer
dc.contributor.author
et al.
dc.date.accessioned
2018-08-30T10:15:39Z
dc.date.available
2017-06-11T20:09:21Z
dc.date.available
2018-08-30T10:15:39Z
dc.date.issued
2015-12-11
dc.identifier.issn
0168-9002
dc.identifier.issn
1872-9576
dc.identifier.other
10.1016/j.nima.2015.08.026
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/105474
dc.identifier.doi
10.3929/ethz-b-000105474
dc.description.abstract
The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the 90Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n+p strip sensors is discussed.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Elsevier
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Silicon strip sensors
en_US
dc.subject
Charge collection
en_US
dc.subject
Radiation damage
en_US
dc.subject
Surface damage
en_US
dc.title
Impact of low-dose electron irradiation on n+p silicon strip sensors
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2015-08-28
ethz.journal.title
Nuclear Instruments & Methods in Physics Research. Section A
ethz.journal.volume
803
en_US
ethz.journal.abbreviated
Nucl. instrum. methods phys. res., Sect. A, Accel. spectrom. detect. assoc. equip.
ethz.pages.start
100
en_US
ethz.pages.end
112
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
007892163
ethz.publication.place
Amsterdam
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-11T20:10:02Z
ethz.source
ECIT
ethz.identifier.importid
imp593653938dc9394628
ethz.ecitpid
pub:165091
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-13T16:01:46Z
ethz.rosetta.lastUpdated
2021-02-15T01:27:44Z
ethz.rosetta.versionExported
true
ethz.COinS
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