Defect reduction in epitaxial 3C-SiC on Si(001) and Si(111) by deep substrate patterning

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Author
von Känel, Hans
Miglio, Leo
Crippa, Danilo
Kreiliger, Thomas
Mauceri, Marco
Puglisi, Marco
Mancarella, Fulvio
Anzalone, Ruggero
Piluso, Nicolo
La Via, Francesco
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Date
2015
Type
    Conference Paper
Publication status
published
External links
Editor
Chassende, Didier
Ferro, Gabriel
Book title
Silicon Carbide and Related Materials 2014: Selected Peer Reviewed Papers from the European Conference on Silicon Carbide & Related Materials
Journal / series
Materials Science Forum
Volume
821-823
Pages / Article No.
193 - 196
Publisher
Trans Tech Publications
Event
European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), Grenoble, France, September 21-25, 2014
Subject
3C-SiC; Heteroepitaxy; Low-pressure chemical vapor deposition; Patterned substrates; Stacking fault reduction; Wafer bowing
Organisational unit
03569 - Batlogg, Bertram (emeritus)  
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Citations
Cited 14 times in Scopus
ETH Bibliography
yes
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