A direct band gap GeSn Laser on Si
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Date
2015Type
- Conference Paper
Abstract
Temperature-dependent photoluminescence spectroscopy reveals that partially strain-relaxed Ge 0.87 Sn 0.13 exhibits a fundamental direct band gap. For such an alloy, we show lasing at ≈ 2.3 μm emission wavelength under optical pumping up to 90 K
Publication status
publishedExternal links
Book title
2015 Conference on Lasers and Electro-Optics (CLEO)Pages / Article No.
Publisher
IEEEEvent
Organisational unit
03759 - Faist, Jérôme / Faist, Jérôme
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