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dc.contributor.author
Sant, Saurabh
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-06-11T23:45:39Z
dc.date.available
2017-06-11T23:45:39Z
dc.date.issued
2015-05
dc.identifier.issn
2168-6734
dc.identifier.other
10.1109/JEDS.2015.2390971
dc.identifier.uri
http://hdl.handle.net/20.500.11850/111815
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Tunnel FETs
dc.subject
GeSn-SiGeSn hetero structures
dc.subject
Band offset optimization
dc.title
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
dc.type
Journal Article
ethz.journal.title
IEEE Journal of the Electron Device Society
ethz.journal.volume
3
ethz.journal.issue
3
ethz.pages.start
164
ethz.pages.end
175
ethz.notes
Published online 12 January 2015.
ethz.identifier.wos
ethz.identifier.nebis
007605480
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02636 - Institut für Integrierte Systeme (IIS) / Integrated Systems Laboratory (IIS)::03925 - Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02636 - Institut für Integrierte Systeme (IIS) / Integrated Systems Laboratory (IIS)::03925 - Luisier, Mathieu
ethz.date.deposited
2017-06-11T23:46:02Z
ethz.source
ECIT
ethz.identifier.importid
imp5936540b708a881930
ethz.ecitpid
pub:173288
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T23:48:42Z
ethz.rosetta.lastUpdated
2017-07-12T23:48:42Z
ethz.rosetta.versionExported
true
ethz.COinS
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