FinFET to nanowire transition at 5nm design rules - Research Collection

Metadata only

Author

Luisier, Mathieu

Date

2015

Type

Conference Paper

Citations

Cited 11 times in Scopus

ETH Bibliography

yes

Altmetrics

Publication status

published

External links

https://doi.org/10.1109/SISPAD.2015.7292307

Book title

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Pages / Article No.

254 - 257

Publisher

IEEE

Event

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2015), Washington, DC, USA, September 9-11, 2015

Organisational unit

03925 - Luisier, Mathieu / Luisier, Mathieu

More

Show all metadata

Citations

Cited 11 times in Scopus

ETH Bibliography

yes

Altmetrics