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dc.contributor.author
Dib, El
dc.contributor.author
Carrillo-Nuñez, Hamilton
dc.contributor.author
Cavassilas, N.
dc.contributor.author
Bescond, M.
dc.date.accessioned
2017-06-12T01:29:38Z
dc.date.available
2017-06-12T01:29:38Z
dc.date.issued
2016
dc.identifier.issn
0021-8979
dc.identifier.issn
1089-7550
dc.identifier.other
10.1063/1.4940959
dc.identifier.uri
http://hdl.handle.net/20.500.11850/113378
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions
dc.type
Journal Article
ethz.journal.title
Journal of Applied Physics
ethz.journal.volume
119
ethz.journal.issue
4
ethz.journal.abbreviated
J. appl. physi.
ethz.pages.start
044509
ethz.size
7 p.
ethz.notes
Published online 29 January 2016.
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000506701
ethz.publication.place
Berlin
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-12T01:34:23Z
ethz.source
ECIT
ethz.identifier.importid
imp593654269204715467
ethz.ecitpid
pub:175069
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T12:42:21Z
ethz.rosetta.lastUpdated
2018-11-02T22:31:05Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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