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dc.contributor.author
Fluri, Aline
dc.contributor.author
Pergolesi, Daniele
dc.contributor.author
Roddatis, Vladimir
dc.contributor.author
Wokaun, Alexander
dc.contributor.author
Lippert, Thomas
dc.date.accessioned
2018-09-06T14:01:07Z
dc.date.available
2017-06-12T02:22:26Z
dc.date.available
2018-09-06T14:01:07Z
dc.date.issued
2016
dc.identifier.issn
2041-1723
dc.identifier.other
10.1038/ncomms10692
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/113970
dc.identifier.doi
10.3929/ethz-b-000113970
dc.description.abstract
Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Nature
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.title
In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2016-02-25
ethz.journal.title
Nature Communications
ethz.journal.volume
7
en_US
ethz.journal.abbreviated
Nat Commun
ethz.pages.start
10692
en_US
ethz.size
9 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
007044158
ethz.publication.place
London
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02516 - Inst. f. Chemie- und Bioingenieurwiss. / Inst. Chemical and Bioengineering::03421 - Wokaun, Alexander (emeritus)
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02513 - Laboratorium für Anorganische Chemie / Laboratory of Inorganic Chemistry
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02516 - Inst. f. Chemie- und Bioingenieurwiss. / Inst. Chemical and Bioengineering::03421 - Wokaun, Alexander (emeritus)
ethz.date.deposited
2017-06-12T02:26:51Z
ethz.source
ECIT
ethz.identifier.importid
imp593654332341e28915
ethz.ecitpid
pub:175717
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-13T13:21:17Z
ethz.rosetta.lastUpdated
2024-02-02T05:57:59Z
ethz.rosetta.versionExported
true
ethz.COinS
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