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dc.contributor.author
Grützmacher, Detlev
dc.contributor.author
Tsujino, Soichiro
dc.contributor.author
Mussler, Gregor
dc.contributor.author
Shushunova, V.
dc.contributor.author
Scheinert, Maxi
dc.contributor.author
Müller, Elisabeth
dc.contributor.author
Demarina, Nataliya
dc.contributor.author
Sigg, Hans
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Kerrmarrec, O.
dc.date.accessioned
2021-03-15T07:38:11Z
dc.date.available
2017-06-12T04:33:12Z
dc.date.available
2021-03-15T07:38:11Z
dc.date.issued
2006
dc.identifier.isbn
1-4244-0461-4
en_US
dc.identifier.other
10.1109/ISTDM.2006.246527
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115355
dc.description.abstract
The demonstration of a semiconductor laser based on intersubband transitions in an InGaAs/InP cascade structure, has stimulated studies to transfer this approach to Si/SiGe. The feature, that intersubband transitions are by nature direct, made it appealing to use this concept to create a laser in a material with an indirect bandgap like Si. A laser in Si would allow the monolithic integration of optical active devices with mature Si electronics. Intersubband electroluminescence in SiGe layers was obtained first in pseudomorphically deposited structures. However, these structures were not suitable to obtain a laser for numerous reasons, in particular the number of cascades is limited due to the huge strain accumulated in these structures. Consequently, efforts were concentrated to strain compensated Si/SiGe quantum cascade (QC) structures grown on relaxed SiGe buffer layers. It should be noted that due to the large effective tunneling mass of electrons in the strain compensated structures, designs for intersubband transitions of hole states appear to be most promising for a SiGe cascade laser, despite the complexity of the valence band. Here, we summarize our research efforts to improve the performance of Si/SiGe quantum cascade structures by novel designs, advanced growth facilities as well as unique contact and waveguide layer sequences to minimize losses and to increase the gain.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
SiGe quantum cascade structures: physics, growth and technology
en_US
dc.type
Conference Paper
dc.date.published
2006-10-30
ethz.book.title
2006 International SiGe Technology and Device Meeting
en_US
ethz.pages.start
1716021
en_US
ethz.size
2 p.
en_US
ethz.event
3rd International Silicon Germanium Technology and Device Meeting (ISTDM 2006)
en_US
ethz.event.location
Princeton, NJ, USA
en_US
ethz.event.date
May 15-27, 2006
en_US
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:37:11Z
ethz.source
ECIT
ethz.identifier.importid
imp59365451e414e35592
ethz.ecitpid
pub:177184
ethz.eth
no
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-18T13:08:17Z
ethz.rosetta.lastUpdated
2022-03-29T05:45:29Z
ethz.rosetta.versionExported
true
ethz.COinS
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