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dc.contributor.author
Ajili, Lassaad
dc.contributor.author
Scalari, Giacomo
dc.contributor.author
Hoyler, Nicolas
dc.contributor.author
Giovannini, Marcella
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2017-06-12T04:33:45Z
dc.date.available
2017-06-12T04:33:45Z
dc.date.issued
2005-10
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.2081122
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115362
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
In GaAs – AlInAs ∕ InP terahertz quantum cascade laser
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
87
ethz.journal.issue
14
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
141107-1
ethz.pages.end
141107-3
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:37:11Z
ethz.source
ECIT
ethz.identifier.importid
imp593654520f66090630
ethz.ecitpid
pub:177191
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-20T16:08:56Z
ethz.rosetta.lastUpdated
2024-02-02T00:02:23Z
ethz.rosetta.versionExported
true
ethz.COinS
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