Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs/AlInAs quantum-cascade structures
- Journal Article
The effect of intrasubband interface roughness scattering on intersubband transition linewidths in double-quantum-well and quantum-cascade (QC) structures is studied. In n -GaInAsAlInAs structures, the calculated ratios between the linewidths of the spatially vertical and diagonal transitions agree with the experimental values. In p -Si Si0.2Ge0.8 QC structures, the experimentally observed linewidth is a factor of 4-7 smaller than the predicted value. However, by assuming a vertical interface correlation between adjacent interfaces separated by less than ~1.5 nm, the theory reproduces the experiment. Transmission electron microscopy of the SiGe QC sample reveals this vertical correlation, supporting the model. Show more
Journal / seriesApplied Physics Letters
Pages / Article No.
PublisherAmerican Institute of Physics
Organisational unit03759 - Faist, Jérôme / Faist, Jérôme
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