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dc.contributor.author
Tsujino, S.
dc.contributor.author
Borak, A.
dc.contributor.author
Müller, E.
dc.contributor.author
Scheinert, M.
dc.contributor.author
Falub, C.V.
dc.contributor.author
Sigg, H.
dc.contributor.author
Grützmacher, D.
dc.contributor.author
Giovannini, M.
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2017-06-12T04:35:20Z
dc.date.available
2017-06-12T04:35:20Z
dc.date.issued
2005-02
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.1862344
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115401
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs/AlInAs quantum-cascade structures
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
86
ethz.journal.issue
6
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
062113
ethz.size
3 p.
ethz.notes
Published online 3 February 2005.
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:37:11Z
ethz.source
ECIT
ethz.identifier.importid
imp593654529bb5f36371
ethz.ecitpid
pub:177230
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T10:50:50Z
ethz.rosetta.lastUpdated
2018-11-02T22:57:29Z
ethz.rosetta.versionExported
true
ethz.COinS
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