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dc.contributor.author
Diehl, Laurent
dc.contributor.author
Borak, Alexander
dc.contributor.author
Menteşe, Selçuk
dc.contributor.author
Grützmacher, Detlev
dc.contributor.author
Sigg, Hans
dc.contributor.author
Gennser, Ulf
dc.contributor.author
Sagnes, Isabelle
dc.contributor.author
Campidelli, Yves
dc.contributor.author
Kermarrec, Olivier
dc.contributor.author
Bensahel, Daniel
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2017-06-12T04:36:42Z
dc.date.available
2017-06-12T04:36:42Z
dc.date.issued
2004-04
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.1691173
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115419
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Anticrossing between heavy-hole states in Si0.2Ge0.8/Si-coupled quantum wells grown on Si0.5Ge0.5 pseudosubstrate
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
84
ethz.journal.issue
14
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
2497
ethz.pages.end
2499
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:37:11Z
ethz.source
ECIT
ethz.identifier.importid
imp59365452ebdfb75880
ethz.ecitpid
pub:177249
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T19:58:51Z
ethz.rosetta.lastUpdated
2022-03-28T14:50:31Z
ethz.rosetta.versionExported
true
ethz.COinS
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