Strain compensated Si/SiGe quantum cascade emitters grown on SiGe pseudosubstrates
dc.contributor.author
Diehl, Laurent
dc.contributor.author
Menteşe, Selçuk
dc.contributor.author
Sigg, Hans
dc.contributor.author
Müller, Elisabeth
dc.contributor.author
Grützmacher, Detlev
dc.contributor.author
Gennser, Ulf
dc.contributor.author
Sagnes, Isabelle
dc.contributor.author
Fromherz, Thomas
dc.contributor.author
Stangl, Julian
dc.contributor.author
Roch, Tomas
dc.contributor.author
Bauer, Günther
dc.contributor.author
Campidelli, Yves
dc.contributor.author
Kermarrec, Olivier
dc.contributor.author
Bensahel, Daniel
dc.contributor.author
Faist, Jérôme
dc.contributor.editor
Pavesi, Lorenzo
dc.contributor.editor
Gaponenko, Sergey
dc.contributor.editor
Dal Negro, Luca
dc.date.accessioned
2021-03-15T09:26:00Z
dc.date.available
2017-06-12T04:40:40Z
dc.date.available
2021-03-15T09:26:00Z
dc.date.issued
2003
dc.identifier.isbn
978-94-010-0149-6
en_US
dc.identifier.isbn
978-1-4020-1194-8
en_US
dc.identifier.isbn
978-1-4020-1193-1
en_US
dc.identifier.issn
1568-2609
dc.identifier.other
10.1007/978-94-010-0149-6_28
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115454
dc.description.abstract
Quantum cascade lasers (QCLs) based on III-V materials such as InGaAs/InAlAs [1] or GaAs/AlGaAs [2] have attracted an increasing attention since the first experimental demonstration in 1994. These convenient emitters have been successfully operated in the 3.4-24 μm range, and also recently in the terahertz range [3]. The concept of QCLs can also be applied to indirect bandgap materials since it relies on intersubband optical transitions for which the nature of the bandgap does not play any role. The Si/SiGe material system is particularly a candidate of interest, because of the possible compatibility with the well established Si integrated circuit processing.
en_US
dc.language.iso
en
en_US
dc.publisher
Springer
en_US
dc.title
Strain compensated Si/SiGe quantum cascade emitters grown on SiGe pseudosubstrates
en_US
dc.type
Book Chapter
ethz.book.title
Towards the First Silicon Laser
en_US
ethz.journal.title
NATO Science Series
ethz.journal.volume
93
en_US
ethz.pages.start
325
en_US
ethz.pages.end
330
en_US
ethz.publication.place
Dordrecht
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.date.deposited
2017-06-12T04:46:10Z
ethz.source
ECIT
ethz.identifier.importid
imp59365453b5dcd56409
ethz.ecitpid
pub:177286
ethz.eth
no
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-25T10:58:16Z
ethz.rosetta.lastUpdated
2022-03-29T05:46:01Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Strain%20compensated%20Si/SiGe%20quantum%20cascade%20emitters%20grown%20on%20SiGe%20pseudosubstrates&rft.jtitle=NATO%20Science%20Series&rft.date=2003&rft.volume=93&rft.spage=325&rft.epage=330&rft.issn=1568-2609&rft.au=Diehl,%20Laurent&Mente%C5%9Fe,%20Sel%C3%A7uk&Sigg,%20Hans&M%C3%BCller,%20Elisabeth&Gr%C3%BCtzmacher,%20Detlev&rft.isbn=978-94-010-0149-6&978-1-4020-1194-8&978-1-4020-1193-1&rft.genre=bookitem&rft_id=info:doi/10.1007/978-94-010-0149-6_28&rft.btitle=Towards%20the%20First%20Silicon%20Laser
Files in this item
Files | Size | Format | Open in viewer |
---|---|---|---|
There are no files associated with this item. |
Publication type
-
Book Chapter [9514]