Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
- Journal Article
The intersubband electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum cascade (QC) structures was discussed. The design of the active region of QC structure was based on a bound-to-continuum transition. The results showed that strain compensated structures were found to be a solution to the strong limitation of both the complexity of design encountered with the QC structures grown pseudomorphically on Si substrates and the number of periods. Show more
Journal / seriesApplied Physics Letters
Pages / Article No.
PublisherAmerican Institute of Physics
Organisational unit03759 - Faist, Jérôme / Faist, Jérôme
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