Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

Abstract

The intersubband electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum cascade (QC) structures was discussed. The design of the active region of QC structure was based on a bound-to-continuum transition. The results showed that strain compensated structures were found to be a solution to the strong limitation of both the complexity of design encountered with the QC structures grown pseudomorphically on Si substrates and the number of periods.