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dc.contributor.author
Diehl, Laurent
dc.contributor.author
Menteşe, Selçuk
dc.contributor.author
Müller, Elisabeth
dc.contributor.author
Grützmacher, Detlev
dc.contributor.author
Sigg, Hans
dc.contributor.author
Gennser, Ulf
dc.contributor.author
Sagnes, Isabelle
dc.contributor.author
Campidelli, Yves
dc.contributor.author
Kermarrec, Olivier
dc.contributor.author
Bensahel, Daniel
dc.contributor.author
Faist, Jérôme
dc.date.accessioned
2021-03-15T09:43:20Z
dc.date.available
2017-06-12T04:40:45Z
dc.date.available
2021-03-15T09:43:20Z
dc.date.issued
2002
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.1528729
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115455
dc.description.abstract
The intersubband electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum cascade (QC) structures was discussed. The design of the active region of QC structure was based on a bound-to-continuum transition. The results showed that strain compensated structures were found to be a solution to the strong limitation of both the complexity of design encountered with the QC structures grown pseudomorphically on Si substrates and the number of periods.
en_US
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
en_US
dc.type
Journal Article
dc.date.published
2002-12-09
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
81
en_US
ethz.journal.issue
25
en_US
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
4700
en_US
ethz.pages.end
4702
en_US
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
en_US
ethz.date.deposited
2017-06-12T04:46:10Z
ethz.source
ECIT
ethz.identifier.importid
imp59365453bb97c45955
ethz.ecitpid
pub:177287
ethz.eth
no
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-13T17:10:02Z
ethz.rosetta.lastUpdated
2024-02-02T13:17:51Z
ethz.rosetta.versionExported
true
ethz.COinS
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