Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate
- Journal Article
We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ=5.3μm to as short as 3.8 μm. Excellent overall agreement with a 6 band kp calculation is obtained, proving the accuracy of recently predicted values of band offsets. Show more
Journal / seriesApplied Physics Letters
Pages / Article No.
PublisherAmerican Institute of Physics
Organisational unit03759 - Faist, Jérôme / Faist, Jérôme
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