Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors
dc.contributor.author
Hofstetter, Daniel
dc.contributor.author
Diehl, Laurent
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Schaff, William J.
dc.contributor.author
Hwang, Jeff
dc.contributor.author
Eastman, Lester F.
dc.contributor.author
Zellweger, Christoph
dc.date.accessioned
2017-06-12T04:41:28Z
dc.date.available
2017-06-12T04:41:28Z
dc.date.issued
2002-04
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.1471569
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115464
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
80
ethz.journal.issue
16
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
2991
ethz.pages.end
2993
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:46:10Z
ethz.source
ECIT
ethz.identifier.importid
imp59365453ead7516123
ethz.ecitpid
pub:177296
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T05:11:01Z
ethz.rosetta.lastUpdated
2024-02-02T00:03:13Z
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true
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Publikationstyp
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Journal Article [130848]