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dc.contributor.author
Hofstetter, Daniel
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Bour, David P.
dc.date.accessioned
2017-06-12T04:44:48Z
dc.date.available
2017-06-12T04:44:48Z
dc.date.issued
2000
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.126074
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115508
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Midinfrared emission from InGaN/GaN-based light-emitting diodes
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
76
ethz.journal.issue
12
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
1495
ethz.pages.end
1497
ethz.notes
.
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T04:46:10Z
ethz.source
ECIT
ethz.identifier.importid
imp59365454d0ff297114
ethz.ecitpid
pub:177340
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-25T10:58:54Z
ethz.rosetta.lastUpdated
2018-11-02T22:59:47Z
ethz.rosetta.versionExported
true
ethz.COinS
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