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dc.contributor.author
Faist, Jérôme
dc.contributor.author
Capasso, Federico
dc.contributor.author
Sirtori, Carlo
dc.contributor.author
Sivco, Deborah L.
dc.contributor.author
Hutchinson, Albert L.
dc.contributor.author
Chu, Sung Nee G.
dc.contributor.author
Cho, Alfred Y.
dc.date.accessioned
2017-06-12T04:58:32Z
dc.date.available
2017-06-12T04:58:32Z
dc.date.issued
1993-09
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.109675
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115653
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Measurement of the intersubband scattering rate in semiconductor quantum wells by excited state differential absorption spectroscopy
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
63
ethz.journal.issue
10
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
1354
ethz.pages.end
1356
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T05:02:17Z
ethz.source
ECIT
ethz.identifier.importid
imp59365457a48a224098
ethz.ecitpid
pub:177488
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T04:53:30Z
ethz.rosetta.lastUpdated
2020-02-14T16:49:32Z
ethz.rosetta.versionExported
true
ethz.COinS
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