Orientation dependence of the phase modulation in a p‐n junction GaAs/Al x Ga1−x As waveguide
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Reinhart, F.K.
dc.contributor.author
Martin, D.
dc.contributor.author
Tuncel, E.
dc.date.accessioned
2017-06-12T04:59:54Z
dc.date.available
2017-06-12T04:59:54Z
dc.date.issued
1987-01
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.97875
dc.identifier.uri
http://hdl.handle.net/20.500.11850/115671
dc.language.iso
en
dc.publisher
American Institute of Physics
dc.title
Orientation dependence of the phase modulation in a p‐n junction GaAs/Al x Ga1−x As waveguide
dc.type
Journal Article
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
50
ethz.journal.issue
2
ethz.journal.abbreviated
Appl. Phys. Lett.
ethz.pages.start
68
ethz.pages.end
70
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2017-06-12T05:02:17Z
ethz.source
ECIT
ethz.identifier.importid
imp593654580d03568094
ethz.ecitpid
pub:177506
ethz.eth
no
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T17:19:53Z
ethz.rosetta.lastUpdated
2022-03-28T14:53:38Z
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true
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Journal Article [120688]