Show simple item record

dc.contributor.author
Gassenq, Alban
dc.contributor.author
Tardif, Samuel
dc.contributor.author
Guilloy, Kevin
dc.contributor.author
Osvaldo Dias, Guilherme
dc.contributor.author
Pauc, Nicolas
dc.contributor.author
Duchemin, Ivan
dc.contributor.author
Rouchon, Denis
dc.contributor.author
Hartmann, Jean M.
dc.contributor.author
Widiez, Julie
dc.contributor.author
Escalante, José
dc.contributor.author
Niquet, Yann-Michel
dc.contributor.author
Geiger, Richard
dc.contributor.author
Zabel, Thomas
dc.contributor.author
Sigg, Hans
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Chelnokov, Alexei
dc.contributor.author
Rieutord, François
dc.contributor.author
Reboud, Vincent
dc.contributor.author
Calvo, Vincent
dc.date.accessioned
2018-07-05T11:24:00Z
dc.date.available
2017-06-12T08:01:10Z
dc.date.available
2018-07-05T11:24:00Z
dc.date.issued
2016-06
dc.identifier.issn
0003-6951
dc.identifier.issn
1077-3118
dc.identifier.other
10.1063/1.4953788
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/117693
dc.language.iso
en
en_US
dc.publisher
American Institute of Physics
en_US
dc.title
Accurate strain measurements in highly strained Ge microbridges
en_US
dc.type
Journal Article
dc.date.published
2016-06-13
ethz.journal.title
Applied Physics Letters
ethz.journal.volume
108
en_US
ethz.journal.issue
24
en_US
ethz.journal.abbreviated
Appl. phys. lett.
ethz.pages.start
241902
en_US
ethz.size
5 p.
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
000038985
ethz.publication.place
Melville, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02510 - Institut für Quantenelektronik (IQE) / Institute for Quantum Electronics (IQE)::03759 - Faist, Jérôme
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02510 - Institut für Quantenelektronik (IQE) / Institute for Quantum Electronics (IQE)::03759 - Faist, Jérôme
ethz.date.deposited
2017-06-12T08:02:40Z
ethz.source
ECIT
ethz.identifier.importid
imp5936547e1d9a313944
ethz.ecitpid
pub:179610
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-12T16:37:16Z
ethz.rosetta.lastUpdated
2018-08-03T20:48:25Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Accurate%20strain%20measurements%20in%20highly%20strained%20Ge%20microbridges&rft.jtitle=Applied%20Physics%20Letters&rft.date=2016-06&rft.volume=108&rft.issue=24&rft.spage=241902&rft.issn=0003-6951&1077-3118&rft.au=Gassenq,%20Alban&Tardif,%20Samuel&Guilloy,%20Kevin&Osvaldo%20Dias,%20Guilherme&Pauc,%20Nicolas&rft.genre=article&
 Search via SFX

Files in this item

FilesSizeFormatOpen in viewer

There are no files associated with this item.

Publication type

Show simple item record