Development of electron holes across the temperature-induced semiconductor–metal transition in Ba1−xSrxCo1−yFeyO3−δ(x, y = 0.2–0.8)
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Date
2009Type
- Journal Article
ETH Bibliography
yes
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Publication status
publishedExternal links
Journal / series
Journal of Physics: Condensed MatterVolume
Pages / Article No.
Publisher
IOP PublishingOrganisational unit
03270 - Gauckler, Ludwig J.
Notes
Print publication Issue 1 (7 January 2009). Received 16 June 2008. In final form 7 October 2008. Published 2 December 2008.More
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ETH Bibliography
yes
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