Development of electron holes across the temperature-induced semiconductor–metal transition in Ba1−xSrxCo1−yFeyO3−δ(x, y = 0.2–0.8)
Gauckler, Ludwig J.
- Journal Article
Journal / seriesJournal of Physics: Condensed Matter
Pages / Article No.
PublisherInstitute of Physics
Organisational unit03270 - Gauckler, Ludwig J.
NotesPrint publication Issue 1 (7 January 2009). Received 16 June 2008. In final form 7 October 2008. Published 2 December 2008.
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