Development of electron holes across the temperature-induced semiconductor–metal transition in Ba1−xSrxCo1−yFeyO3−δ(x, y = 0.2–0.8)
Metadata only
Autor(in)
Alle anzeigen
Datum
2009Typ
- Journal Article
ETH Bibliographie
yes
Altmetrics
Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Journal of Physics: Condensed MatterBand
Seiten / Artikelnummer
Verlag
IOP PublishingOrganisationseinheit
03270 - Gauckler, Ludwig J.
Anmerkungen
Print publication Issue 1 (7 January 2009). Received 16 June 2008. In final form 7 October 2008. Published 2 December 2008.ETH Bibliographie
yes
Altmetrics