Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime - Research Collection

Metadata only

Autor(in)

Lenarczyk, Pawel

Luisier, Mathieu

Datum

2016

Typ

Conference Paper

Zitate

14 Zitate in Web of Science

15 Zitate in Scopus

ETH Bibliographie

yes

Altmetrics

Publikationsstatus

published

Externe Links

https://doi.org/10.1109/SISPAD.2016.7605209

Herausgeber(in)

Buchtitel

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Seiten / Artikelnummer

311 - 314

Verlag

IEEE

Konferenz

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany, September 6-8, 2016

Organisationseinheit

03925 - Luisier, Mathieu / Luisier, Mathieu

Mehr

Alle Metadaten anzeigen

Zitate

14 Zitate in Web of Science

15 Zitate in Scopus

ETH Bibliographie

yes

Altmetrics