Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime
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Date
2016Type
- Conference Paper
Citations
Cited 14 times in
Web of Science
Cited 14 times in
Scopus
ETH Bibliography
yes
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Publication status
publishedExternal links
Book title
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)Pages / Article No.
Publisher
IEEEEvent
Organisational unit
03925 - Luisier, Mathieu / Luisier, Mathieu
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Citations
Cited 14 times in
Web of Science
Cited 14 times in
Scopus
ETH Bibliography
yes
Altmetrics