Transfer Matrix Based Semiclassical Model for Field-induced and Geometrical Quantum Confinement in Tunnel FETs

Metadata only

Author

Date

2016

Type

Conference Paper

ETH Bibliography

yes

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Publication status

published

External links

Editor

Book title

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Pages / Article No.

77 - 80

Publisher

IEEE

Event

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany, September 6-8, 2016

Subject

Tunnel FET; Line Tunneling; Gemoetrical quantum confinement; Field induced quatum confinement

Organisational unit

03925 - Luisier, Mathieu / Luisier, Mathieu

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ETH Bibliography

yes

Altmetrics

Research Collection