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dc.contributor.author
Moselund, Kirsten E.
dc.contributor.author
Cutaia, Davide
dc.contributor.author
Schmid, Heinz
dc.contributor.author
Riel, Heike
dc.contributor.author
Sant, Saurabh
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2018-05-30T06:23:09Z
dc.date.available
2017-06-12T15:52:12Z
dc.date.available
2018-05-30T06:23:09Z
dc.date.issued
2016-10
dc.identifier.isbn
978-1-5090-2969-3
en_US
dc.identifier.isbn
978-1-5090-2970-9
en_US
dc.identifier.other
10.1109/ESSDERC.2016.7599671
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/122601
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Tunnel FET
en_US
dc.subject
III-V
en_US
dc.subject
MOCVD growth
en_US
dc.subject
Trap analysis
en_US
dc.title
Complementary III-V heterostructure Tunnel FETs (invited)
en_US
dc.type
Conference Paper
dc.date.published
2016-10-20
ethz.book.title
2016 46th European Solid-State Device Research Conference (ESSDERC)
en_US
ethz.pages.start
403
en_US
ethz.pages.end
407
en_US
ethz.event
46th European Solid-State Device Research Conference (ESSDERC 2016)
en_US
ethz.event.location
Lausanne, Switzerland
en_US
ethz.event.date
September 12-15, 2016
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-12T15:55:48Z
ethz.source
ECIT
ethz.identifier.importid
imp593654dd91a9396523
ethz.ecitpid
pub:184923
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-05-30T06:23:13Z
ethz.rosetta.lastUpdated
2018-05-30T06:23:13Z
ethz.rosetta.exportRequired
false
ethz.rosetta.versionExported
true
ethz.COinS
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