Effect of Surface Roughness and Phonon Scattering on Extremely Narrow InAs-Si Nanowire TFETs
dc.contributor.author
Carrillo Núñez, Hamilton
dc.contributor.author
Rhyner, Reto
dc.contributor.author
Luisier, Mathieu
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-06-12T15:52:28Z
dc.date.available
2017-06-12T15:52:28Z
dc.date.issued
2016
dc.identifier.isbn
978-1-5090-2969-3
dc.identifier.isbn
978-1-5090-2970-9
dc.identifier.other
10.1109/ESSDERC.2016.7599618
dc.identifier.uri
http://hdl.handle.net/20.500.11850/122604
dc.language.iso
en
dc.publisher
IEEE
dc.title
Effect of Surface Roughness and Phonon Scattering on Extremely Narrow InAs-Si Nanowire TFETs
dc.type
Conference Paper
ethz.book.title
2016 46th European Solid-State Device Research Conference (ESSDERC)
ethz.pages.start
188
ethz.pages.end
191
ethz.event
46th European Solid-State Device Research Conference (ESSDERC)
ethz.event.location
Lausanne, Switzerland
ethz.event.date
September 12-15, 2016
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory::03925 - Luisier, Mathieu / Luisier, Mathieu
ethz.date.deposited
2017-06-12T15:55:48Z
ethz.source
ECIT
ethz.identifier.importid
imp593654dd9856674869
ethz.ecitpid
pub:184926
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T03:25:48Z
ethz.rosetta.lastUpdated
2018-11-03T00:40:58Z
ethz.rosetta.versionExported
true
ethz.COinS
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