Integrating bottom-up grown silicon nanowires on a CMOS chip to realize high-density transistor arrays for chemical sensing
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We report on a new sensor platform for chemical sensing featuring 1024 individually addressable field-effect transistors (FETs), based on small bundles of nominally undoped Si nanowires (SiNWs). The SiNW devices are integrated directly on top of control and readout circuits fabricated in complementary metal-oxide-semiconductor (CMOS) technology. The sensing mechanism is based on electrical field tuning of the conductivity through Schottky junctions at the metal/Si nanowire interfaces . We show integration, electrical measurements and pH-sensing of a high-density array (≥100 devices/mm2) with a sensing area of 1 x 5μm2 per sensor element. Show more
Book title20th International Conference on Miniaturized Systems for Chemistry and Life Sciences (MicroTAS 2016)
Pages / Article No.
PublisherChemical and Biological Microsystems Society
SubjectSilicon nanowires; Field-effect transistor; CMOS; Dielectrophoresis; Chemical sensor
Organisational unit03684 - Hierlemann, Andreas / Hierlemann, Andreas
267351 - Seamless Integration of Neurons with CMOS Microelectronics (EC)
NotesPoster abstract. Poster presentation on October 11, 2016.
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