Optimizations of epilayer structure design and fabrication process on INP/GAASSB double heterojunction bipolar transistors

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Author
Date
2011Type
- Doctoral Thesis
ETH Bibliography
yes
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https://doi.org/10.3929/ethz-a-006682767Publication status
publishedExternal links
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Publisher
ETH ZürichSubject
BIPOLAR TRANSISTORS (ELECTRONICS); EPITAXIALSCHICHTEN (PHYSIK VON MOLEKULARSYSTEMEN); BIPOLARE TRANSISTOREN (ELEKTRONIK); GALLIUM ARSENIDE DEVICES (ELECTRONICS); INDIUMPHOSPHID (ANORGANISCHE CHEMIE); HETEROJUNCTION + HETEROSTRUCTURE (CRYSTALLOGRAPHY); INDIUM PHOSPHIDES (INORGANIC CHEMISTRY); THIN LAYER FORMATION BY VAPORIZATION AND CONDENSATION (PHYSICS OF MOLECULAR SYSTEMS); GALLIUMARSENID-BAUELEMENTE (ELEKTRONIK); HETEROKONTAKT + HETEROSTRUKTUR (KRISTALLOGRAPHIE)Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
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ETH Bibliography
yes
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