Integration of III-V heterostructure tunnel FETs on Si using template assisted selective epitaxy (TASE)
dc.contributor.author
Moselund, Kirsten E.
dc.contributor.author
Cutaia, Davide
dc.contributor.author
Schmid, Heinz
dc.contributor.author
Borg, Mattias
dc.contributor.author
Sant, Saurabh
dc.contributor.author
Schenk, Andreas
dc.contributor.author
Riel, Heike
dc.date.accessioned
2017-06-12T19:46:08Z
dc.date.available
2017-06-12T19:46:08Z
dc.date.issued
2016
dc.identifier.isbn
978-1-5090-1964-9
dc.identifier.isbn
978-1-5090-1965-6
dc.identifier.other
10.1109/ICIPRM.2016.7528552
dc.identifier.uri
http://hdl.handle.net/20.500.11850/128488
dc.language.iso
en
dc.publisher
IEEE
dc.title
Integration of III-V heterostructure tunnel FETs on Si using template assisted selective epitaxy (TASE)
dc.type
Other Conference Item
ethz.book.title
2016 Compound Semiconductor Week (CSW) Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
ethz.size
1 p.
ethz.event
28th International Conference on Indium Phosphide & Related Materials (IPRM), 43rd International Symposium on Compound Semiconductors (ISCS)
ethz.event.location
Toyama, Japan
ethz.event.date
June 26-30, 2016
ethz.identifier.wos
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.date.deposited
2017-06-12T19:46:59Z
ethz.source
ECIT
ethz.identifier.importid
imp593655421e30131226
ethz.ecitpid
pub:191398
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-14T16:41:08Z
ethz.rosetta.lastUpdated
2017-07-14T16:41:08Z
ethz.rosetta.versionExported
true
ethz.COinS
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