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dc.contributor.author
Sant, Saurabh
dc.contributor.author
Schenk, Andreas
dc.date.accessioned
2017-06-12T19:50:14Z
dc.date.available
2017-06-12T19:50:14Z
dc.date.issued
2017-02
dc.identifier.other
10.1109/LED.2016.2636658
dc.identifier.uri
http://hdl.handle.net/20.500.11850/128609
dc.language.iso
en
dc.publisher
IEEE
dc.subject
Tunnel transistors
dc.subject
Interface roughness
dc.subject
Field induced quantum confinement
dc.title
Modeling the Effect of Interface Roughness on the Performance of Tunnel FETs
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
38
ethz.journal.issue
2
ethz.pages.start
258
ethz.pages.end
261
ethz.notes
Published online 7 December 2016.
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
010838631
ethz.publication.place
New York
ethz.publication.status
published
ethz.date.deposited
2017-06-12T19:50:50Z
ethz.source
ECIT
ethz.identifier.importid
imp59365544a397434705
ethz.ecitpid
pub:191520
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T13:26:54Z
ethz.rosetta.lastUpdated
2017-11-01T06:17:09Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Modeling%20the%20Effect%20of%20Interface%20Roughness%20on%20the%20Performance%20of%20Tunnel%20FETs&rft.jtitle=IEEE%20Electron%20Device%20Letters&rft.date=2017-02&rft.volume=38&rft.issue=2&rft.spage=258&rft.epage=261&rft.au=Sant,%20Saurabh&Schenk,%20Andreas&rft.genre=article&
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