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dc.contributor.author
Deboy, Gerald
dc.contributor.author
Treu, M.
dc.contributor.author
Häberlen, Oliver
dc.contributor.author
Neumayr, Dominik
dc.date.accessioned
2017-06-12T20:19:26Z
dc.date.available
2017-06-12T20:19:26Z
dc.date.issued
2016
dc.identifier.isbn
978-1-5090-3902-9
dc.identifier.isbn
978-1-5090-3901-2
dc.identifier.isbn
978-1-5090-3903-6
dc.identifier.other
10.1109/IEDM.2016.7838458
dc.identifier.uri
http://hdl.handle.net/20.500.11850/129496
dc.language.iso
en
dc.publisher
IEEE
dc.title
Si, SiC and GaN power devices: An unbiased view on key performance indicators
dc.type
Conference Paper
ethz.book.title
2016 IEEE International Electron Devices Meeting (IEDM)
ethz.pages.start
20.2.1
ethz.pages.end
20.2.4
ethz.event
2016 IEEE International Electron Devices Meeting (IEDM)
ethz.event.location
San Francisco, CA, USA
ethz.event.date
December 3-7, 2016
ethz.notes
.
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
ethz.grant.fundername
EC
ethz.date.deposited
2017-06-12T20:19:53Z
ethz.source
ECIT
ethz.identifier.importid
imp593655562cb2c89476
ethz.ecitpid
pub:192475
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T05:52:15Z
ethz.rosetta.lastUpdated
2017-07-15T05:52:15Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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