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dc.contributor.author
Prieto, Ivan
dc.contributor.author
Kozak, Roksolana
dc.contributor.author
Skibitzki, Oliver
dc.contributor.author
Rossell, Marta D.
dc.contributor.author
Zaumseil, Peter
dc.contributor.author
Capellini, Giovanni
dc.contributor.author
Gini, Emilio
dc.contributor.author
Kunze, Karsten
dc.contributor.author
Rojas Dasilva, Yadira A.
dc.contributor.author
Erni, Rolf
dc.contributor.author
Schroeder, Thomas
dc.contributor.author
von Känel, Hans
dc.date.accessioned
2017-06-12T20:25:49Z
dc.date.available
2017-06-12T20:25:49Z
dc.date.issued
2017-02
dc.identifier.other
10.1088/1361-6528/aa5ec4
dc.identifier.uri
http://hdl.handle.net/20.500.11850/129680
dc.language.iso
en
dc.publisher
Institute of Physics Publishing
dc.subject
Epitaxial growth
dc.subject
Facets
dc.subject
GaAs on Si
dc.subject
MOVPE
dc.subject
Nanocrystal
dc.subject
Nanoheteroepitaxy
dc.subject
Nanotwin
dc.title
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy
dc.type
Journal Article
ethz.journal.title
Nanotechnology
ethz.journal.volume
28
ethz.journal.issue
13
ethz.pages.start
135701
ethz.size
8 p.
ethz.notes
Published online 27 February 2017.
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
010842462
ethz.publication.place
Bristol
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung & Wirtschaftsbez. / Domain VP Research & Corporate Relations::02891 - ScopeM / ScopeM
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung & Wirtschaftsbez. / Domain VP Research & Corporate Relations::02891 - ScopeM / ScopeM
ethz.date.deposited
2017-06-12T20:26:34Z
ethz.source
ECIT
ethz.identifier.importid
imp59365559734ac81270
ethz.ecitpid
pub:192665
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-15T06:00:35Z
ethz.rosetta.lastUpdated
2018-11-03T02:47:24Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
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