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dc.contributor.author
Xie, Fangqing
dc.contributor.author
Kavalenka, Maryna N.
dc.contributor.author
Röger, Moritz
dc.contributor.author
Albrecht, Daniel
dc.contributor.author
Hölscher, Hendrik
dc.contributor.author
Leuthold, Juerg
dc.contributor.author
Schimmel, Thomas
dc.date.accessioned
2021-02-02T11:44:58Z
dc.date.available
2017-06-12T20:29:03Z
dc.date.available
2017-12-18T10:37:04Z
dc.date.available
2019-08-29T11:07:48Z
dc.date.available
2021-02-02T11:44:58Z
dc.date.issued
2017-03-01
dc.identifier.issn
2190-4286
dc.identifier.other
10.3762/bjnano.8.57
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/129739
dc.identifier.doi
10.3929/ethz-b-000129739
dc.description.abstract
We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant) or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Beilstein-Institut zur Förderung der Chemischen Wissenschaften
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Electrochemistry
en_US
dc.subject
Encapsulation
en_US
dc.subject
Metallic atomic-scale transistor
en_US
dc.subject
Nanotechnology
en_US
dc.subject
Photolithography
en_US
dc.title
Copper atomic-scale transistors
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2017-03-01
ethz.journal.title
Beilstein Journal of Nanotechnology
ethz.journal.volume
8
en_US
ethz.journal.issue
1
en_US
ethz.journal.abbreviated
Beilstein j. nanotechnol.
ethz.pages.start
530
en_US
ethz.pages.end
538
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.identifier.nebis
010153406
ethz.publication.place
Frankfurt am Main
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory::03974 - Leuthold, Juerg / Leuthold, Juerg
en_US
ethz.tag
Center for Single-Atom Electronics and Photonics
en_US
ethz.date.deposited
2017-06-12T20:30:18Z
ethz.source
ECIT
ethz.identifier.importid
imp5936555aae40748151
ethz.ecitpid
pub:192724
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-18T12:26:59Z
ethz.rosetta.lastUpdated
2021-02-15T23:41:51Z
ethz.rosetta.versionExported
true
ethz.COinS
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