Emitter-size effects and ultimate scalability of InP: GaInP/GaAsSb/InP DHBTs

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Autor(in)

Datum

2008

Typ

Journal Article

ETH Bibliographie

yes

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Publikationsstatus

published

Externe Links

Zeitschrift / Serie

IEEE Electron Device Letters

Band

29(6)

Seiten / Artikelnummer

546 - 548

Verlag

IEEE

Thema

current gain; double heterojunction bipolar transistor (DHBT); emitter-size effects (ESEs); GaAsSb; GaInP; InP; type-II

Organisationseinheit

03721 - Bolognesi, Colombo / Bolognesi, Colombo

Anmerkungen

Current Version Published: 2008-05-20..

Mehr

ETH Bibliographie

yes

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