Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs

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Author
Zeng, Y. P.
Ostinelli, O.
Liu, H. G.
Bolognesi, Colombo R.
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Date
2008
Type
    Journal Article
Publication status
published
External links
Journal / series
Solid-State Electronics
Volume
52(8)
Pages / Article No.
1202 - 1206
Publisher
Elsevier
Subject
Double heterojunction bipolar transistors (DHBTs); GaAsSb; Band discontinuities; Current gain; Emitter size effects; Recombination current
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
03472 - Professur für Feldtheorie (ehemalig)  
Notes
Received 12 August 2007, Revised 17 March 2008, Accepted 8 May 2008, Available online 24 June 2008.
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