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dc.contributor.author
Zeng, Y. P.
dc.contributor.author
Ostinelli, O.
dc.contributor.author
Liu, H. G.
dc.contributor.author
Bolognesi, C.R.
dc.date.accessioned
2017-06-08T20:56:04Z
dc.date.available
2017-06-08T20:56:04Z
dc.date.issued
2008
dc.identifier.issn
0038-1101
dc.identifier.other
10.1016/j.sse.2008.05.007
dc.identifier.uri
http://hdl.handle.net/20.500.11850/13268
dc.language.iso
en
dc.publisher
Elsevier Science
dc.subject
Double heterojunction bipolar transistors (DHBTs)
dc.subject
GaAsSb
dc.subject
Band discontinuities
dc.subject
Current gain
dc.subject
Emitter size effects
dc.subject
Recombination current
dc.title
Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs
dc.type
Journal Article
ethz.journal.title
Solid state electronics
ethz.journal.volume
52
ethz.journal.issue
8
ethz.journal.abbreviated
Solid-state electron.
ethz.pages.start
1202
ethz.pages.end
1206
ethz.notes
Received 12 August 2007, Revised 17 March 2008, Accepted 8 May 2008, Available online 24 June 2008.
ethz.identifier.wos
ethz.identifier.nebis
000055320
ethz.publication.place
Kidlington, Oxford
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02635 - Institut für Elektromagnetische Felder (IEF) / Electromagnetic Fields Laboratory (IEF)::03472 - Professur für Feldtheorie (ehemalig)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02140 - Departement Informationstechnologie und Elektrotechnik / Department of Information Technology and Electrical Engineering::02635 - Institut für Elektromagnetische Felder (IEF) / Electromagnetic Fields Laboratory (IEF)::03472 - Professur für Feldtheorie (ehemalig)
ethz.date.deposited
2017-06-08T20:56:21Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c26e3baf82995
ethz.ecitpid
pub:24668
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T10:09:55Z
ethz.rosetta.lastUpdated
2018-10-01T06:38:29Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Effects%20of%20arsenic%20mole%20fraction%20x%20on%20the%20gain%20characteristics%20of%20type-II%20InP/GaAsxSb1%E2%88%92x%20DHBTs&rft.jtitle=Solid%20state%20electronics&rft.date=2008&rft.volume=52&rft.issue=8&rft.spage=1202&rft.epage=1206&rft.issn=0038-1101&rft.au=Zeng,%20Y.%20P.&Ostinelli,%20O.&Liu,%20H.%20G.&Bolognesi,%20C.R.&rft.genre=article&
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