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dc.contributor.author
Ryter, Roland
dc.contributor.supervisor
Birolini, Alessandro
dc.contributor.supervisor
Fichtner, Wolfgang
dc.date.accessioned
2017-06-13T01:53:59Z
dc.date.available
2017-06-13T01:53:59Z
dc.date.issued
1996
dc.identifier.uri
http://hdl.handle.net/20.500.11850/142612
dc.identifier.doi
10.3929/ethz-a-001637862
dc.language.iso
en
dc.publisher
ETH Zürich
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
BIPOLARE KOMPLEMENTÄRE MOS SCHALTUNGEN, BICMOS (MIKROELEKTRONIK)
dc.subject
HOCHSPANNUNG, BIS 400 KV (ELEKTROTECHNIK)
dc.subject
BIPOLARE TRANSISTOREN (ELEKTRONIK)
dc.subject
DURCHSCHLAGSSPANNUNG (ELEKTROTECHNIK)
dc.subject
BICMOS, BIPOLAR-COMPLEMENTARY-MOS-CIRCUITS (MICROELECTRONICS)
dc.subject
HIGH VOLTAGE, UP TO 400 KV (ELECTRICAL ENGINEERING)
dc.subject
BIPOLAR TRANSISTORS (ELECTRONICS)
dc.subject
BREAKDOWN VOLTAGE (ELECTRICAL ENGINEERING)
dc.title
Analysis and development of high voltage bipolar transistors for BiCMOS smart power applications
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
X, 200 S.
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.notes
Diss. Techn. Wiss. ETH Zürich, Nr. 11446, 1996. Ref.: W. Fichtner ; Korref.: A. Birolini.
ethz.identifier.diss
11446
ethz.identifier.nebis
001637862
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.date.deposited
2017-06-13T01:54:33Z
ethz.source
ECOL
ethz.identifier.importid
imp59366a057a65092777
ethz.ecolpid
eth:40286
ethz.eth
yes
ethz.availability
Closed access
ethz.rosetta.installDate
2017-07-14T12:32:39Z
ethz.rosetta.lastUpdated
2017-12-21T22:21:34Z
ethz.rosetta.versionExported
true
ethz.COinS
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