Entwurf und Charakterisierung von monolithisch integrierten GaAs-MESFET Klasse AB Leistungsverstärkern

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Author
Bös, Thomas Achim
Date
1998
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-001979127
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Bächtold, Werner
Examiner: Jäckel, Heinz
Publisher
ETH Zürich
Subject
TRANSISTOREN/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELEKTRONIK); LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK); GALLIUMARSENID-BAUELEMENTE (ELEKTRONIK); TRANSISTORS/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELECTRONICS); POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY); GALLIUM ARSENIDE DEVICES (ELECTRONICS)
Organisational unit
03262 - Bächtold, Werner
Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 12801, 1998. Ref.: W. Bächtold ; Korref.: H. Jäckel.
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