STM study of Si-Ge heterostructures grown by magnetron sputter epitaxy

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Author
Vögeli, Bernhard
Date
1998
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-001989893
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Bauer, Günter
Examiner: Wachter, Peter
Publisher
ETH Zürich
Subject
SILICIUM (CHEMISCHE ELEMENTE); GERMANIUM (CHEMISCHE ELEMENTE); HETEROKONTAKT + HETEROSTRUKTUR (KRISTALLOGRAPHIE); EPITAXIALSCHICHTEN (PHYSIK VON MOLEKULARSYSTEMEN); IONENSPUTTERING (ELEKTRODYNAMIK); NULLDIMENSIONALE STRUKTUR (PHYSIK DER KONDENSIERTEN MATERIE); RASTERTUNNELMIKROSKOPE, RTM + RASTERTUNNELMIKROSKOPIE; SILICON (CHEMICAL ELEMENTS); GERMANIUM (CHEMICAL ELEMENTS); HETEROJUNCTION + HETEROSTRUCTURE (CRYSTALLOGRAPHY); THIN LAYER FORMATION BY VAPORIZATION AND CONDENSATION (PHYSICS OF MOLECULAR SYSTEMS); ION SPUTTERING (ELECTRODYNAMICS); ZERO-DIMENSIONAL STRUCTURE (CONDENSED MATTER PHYSICS); SCANNING TUNNELING MICROSCOPES, STM + SCANNING TUNNELING MICROSCOPY
Organisational unit
03118 - Wachter, Peter
Notes
Diss. Naturwiss. ETH Zürich, Nr. 12882, 1998. Ref.: P. Wachter ; Korref.: G. Bauer ; Korref.: H. von Känel.
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