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dc.contributor.author
Duran, Halit Celâleddin
dc.contributor.supervisor
Bächtold, Werner
dc.contributor.supervisor
Melchior, Hans
dc.date.accessioned
2017-06-13T02:27:59Z
dc.date.available
2017-06-13T02:27:59Z
dc.date.issued
1998
dc.identifier.uri
http://hdl.handle.net/20.500.11850/143892
dc.identifier.doi
10.3929/ethz-a-002007761
dc.language.iso
en
dc.publisher
ETH Zürich
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK)
dc.subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS)
dc.title
High performance InP-based HEMTs with dry etched gate recess
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
IV, 127 S.
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.code.ddc
6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.notes
Diss. Techn. Wiss. ETH Zürich, Nr. 12900, 1998. Ref.: W. Bächtold ; Korref.: H. Melchior.
ethz.identifier.diss
12900
ethz.identifier.nebis
002007761
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.leitzahl
03262 - Bächtold, Werner
ethz.date.deposited
2017-06-13T02:28:09Z
ethz.source
ECOL
ethz.identifier.importid
imp59366a1f863f236891
ethz.ecolpid
eth:22765
ethz.eth
yes
ethz.availability
Closed access
ethz.rosetta.installDate
2017-07-15T11:03:33Z
ethz.rosetta.lastUpdated
2018-11-04T00:58:59Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=High%20performance%20InP-based%20HEMTs%20with%20dry%20etched%20gate%20recess&rft.date=1998&rft.au=Duran,%20Halit%20Cel%C3%A2leddin&rft.genre=unknown&rft.btitle=High%20performance%20InP-based%20HEMTs%20with%20dry%20etched%20gate%20recess
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