Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
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Date
2002Type
- Doctoral Thesis
ETH Bibliography
yes
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Permanent link
https://doi.org/10.3929/ethz-a-004442467Publication status
publishedExternal links
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Contributors
Examiner: Bächtold, WernerExaminer: Jäckel, Heinz
Publisher
s.n.Subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK); HOCHFREQUENZ,HF, 30 KHZ BIS 30 MHZ (ELEKTROTECHNIK); LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK); HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS); HIGH FREQUENCY, HF, 30 KHZ TO 30 MHZ (ELECTRICAL ENGINEERING); POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY)Organisational unit
03262 - Bächtold, Werner
Notes
Diss., Technische Wissenschaften ETH Zürich, Nr. 14849, 2002.More
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ETH Bibliography
yes
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