Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
Open access
Date
2002Type
- Doctoral Thesis
ETH Bibliography
yes
Altmetrics
Permanent link
https://doi.org/10.3929/ethz-a-004442467Publication status
publishedExternal links
Search print copy at ETH Library
Publisher
s.n.Subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK); HOCHFREQUENZ,HF, 30 KHZ BIS 30 MHZ (ELEKTROTECHNIK); LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK); HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS); HIGH FREQUENCY, HF, 30 KHZ TO 30 MHZ (ELECTRICAL ENGINEERING); POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY)Organisational unit
03262 - Bächtold, Werner
Notes
Diss., Technische Wissenschaften ETH Zürich, Nr. 14849, 2002.More
Show all metadata
ETH Bibliography
yes
Altmetrics