Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
Open access
Datum
2002Typ
- Doctoral Thesis
ETH Bibliographie
yes
Altmetrics
Persistenter Link
https://doi.org/10.3929/ethz-a-004442467Publikationsstatus
publishedExterne Links
Printexemplar via ETH-Bibliothek suchen
Verlag
s.n.Thema
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK); HOCHFREQUENZ,HF, 30 KHZ BIS 30 MHZ (ELEKTROTECHNIK); LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK); HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS); HIGH FREQUENCY, HF, 30 KHZ TO 30 MHZ (ELECTRICAL ENGINEERING); POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY)Organisationseinheit
03262 - Bächtold, Werner
Anmerkungen
Diss., Technische Wissenschaften ETH Zürich, Nr. 14849, 2002.ETH Bibliographie
yes
Altmetrics