Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
dc.contributor.author
Robin, Franck
dc.contributor.supervisor
Bächtold, Werner
dc.contributor.supervisor
Jäckel, Heinz
dc.date.accessioned
2017-06-13T03:57:25Z
dc.date.available
2017-06-13T03:57:25Z
dc.date.issued
2002
dc.identifier.uri
http://hdl.handle.net/20.500.11850/146940
dc.identifier.doi
10.3929/ethz-a-004442467
dc.format
application/pdf
dc.language.iso
en
dc.publisher
s.n.
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK)
dc.subject
HOCHFREQUENZ,HF, 30 KHZ BIS 30 MHZ (ELEKTROTECHNIK)
dc.subject
LEISTUNGSVERSTÄRKER (ELEKTRISCHE SCHWINGUNGSTECHNIK)
dc.subject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS)
dc.subject
HIGH FREQUENCY, HF, 30 KHZ TO 30 MHZ (ELECTRICAL ENGINEERING)
dc.subject
POWER AMPLIFIERS (ELECTRICAL OSCILLATION TECHNOLOGY)
dc.title
Theoretical and technological investigation of the gate structure of InP HEMTs for high-frequency and power applications
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
159 S.
ethz.code.ddc
DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.notes
Diss., Technische Wissenschaften ETH Zürich, Nr. 14849, 2002.
ethz.identifier.diss
14849
ethz.identifier.nebis
004442467
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.leitzahl
03262 - Bächtold, Werner
ethz.date.deposited
2017-06-13T03:57:46Z
ethz.source
ECOL
ethz.identifier.importid
imp59366a615c62417592
ethz.ecolpid
eth:25906
ethz.eth
yes
ethz.availability
Open access
ethz.rosetta.installDate
2017-07-13T02:48:24Z
ethz.rosetta.lastUpdated
2020-02-15T01:28:21Z
ethz.rosetta.versionExported
true
ethz.COinS
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Doctoral Thesis [30174]